PART |
Description |
Maker |
IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IG |
High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技 From old datasheet system HighSpeed 2-Technology IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO220 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT D2Pak 1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
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INFINEON[Infineon Technologies AG]
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QIQ1245001 POWEREXINC-QIQ1245001 |
Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode
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POWEREX[Powerex Power Semiconductors]
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EMP25Q12A EMP25Q12B EMP25Q12C EMP25Q12D EMP25Q12M |
Programmable solated intelligent power module, a 25A, 1200V, three-phase inverter for 15kW industrial and servo motors NPT IGBTs 25A, 1200V
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International Rectifier
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IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
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Infineon Technologies AG
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HGTG30N120CN HGTG30N120D2 |
30A/ 1200V N-Channel IGBT 30A, 1200V N-Channel IGBT 75A 1200V NPT Series N-Channel IGBT
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INTERSIL[Intersil Corporation] http://
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HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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IRG4PH50S |
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
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IRF[International Rectifier]
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IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
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IRF[International Rectifier]
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IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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IRF[International Rectifier]
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AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging 1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging 1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging 10-Bit D-Type Latch 600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器 8-Bit D-Type Latch 8位D型锁存器
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Bourns, Inc.
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X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X40 |
RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length / Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62 Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current Rating:220A
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Intersil, Corp. INTERSIL[Intersil Corporation]
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RHRP15120 FN3677 |
15A/ 1200V Hyperfast Diode 15A, 1200V Hyperfast Diode From old datasheet system
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Intersil Corporation
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